upa1850gr-9jg Renesas Electronics Corporation., upa1850gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1850gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
200
150
100
200
160
120
50
1000
80
40
100
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
10
0.1
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
D
V
1
T
GS
= 1.5 A
A
= 4.0 V
=
125˚C
T
75˚C
25˚C
25˚C
V
ch
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
0
- Channel Temperature -˚C
- Drain to Source Voltage - V
I
D
1
- Drain Current - A
50
10
C
C
C
oss
iss
rss
10
100
V
GS
= 2.5 V
f = 1 MHz
Data Sheet D11818EJ2V0DS00
4.0 V
10 V
150
100
100
500
400
300
200
100
1000
120
100
80
60
40
20
100
0
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0.1
V
1
GS
= 10 V
T
V
SWITCHING CHARACTERISTICS
A
GS
2
= 125
- Gate to Source Voltage - V
75
25
25
I
I
D
D
˚C
˚C
˚C
˚C
- Drain Current - A
1
- Drain Current - A
4
1
6
10
V
V
R
DD
GS
G
I
D
(
= 10
= 10 V
on
= 1.5 A
8
) = 4.0 V
tr
td
td
tf
(on)
(off)
PA1850
100
10
10