upa1808 Renesas Electronics Corporation., upa1808 Datasheet - Page 4

• Manufacturer Part Number: upa1808
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
40
30
20
10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
40
30
20
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
0
-50
0
-50
V
GS
I
Pulsed
D
= 5.0 A
= 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.4
V
T
T
DS
ch
ch
0
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - C
0
V
4.5 V
GS
0.8
= 4.0 V
4.5 V
50
50
1.2
10 V
V
I
D
100
DS
100
= 1.0 mA
Pulsed
1.6
= 10 V
4.0 V
150
2
150
Data Sheet G16250EJ1V0DS
0.000 1
100
0.1
10
0.001
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4 0
3 0
2 0
1 0
1
0.01
0.01
10 0
0
0.1
FORWARD TRANSFER CHARACTERISTICS
10
1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
1
DS
I
P u ls e d
D
V
P u lse d
= 10 V
D S
= 5 .0 A
V
GS
= 10 V
1.5
0.1
2
V
GS
- Gate to Source Voltage - V
I
D
- Drain Current - A
- Gate to Source Voltage - V
2
4
1
2.5
6
T
10
3
T
A
A
= 25 C
8
= 125 C
125 C
25 C
75 C
3.5
PA1808
75 C
25 C
25 C
100
1 0
4