upa1808 Renesas Electronics Corporation., upa1808 Datasheet - Page 2

• Manufacturer Part Number: upa1808
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
TEST CIRCUIT 1 SWITCHING TIME
0
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
DD
L
I
Wave Form
V
Wave Form
D
GS
SYMBOL
A
R
R
R
V
V
V
I
| y
D
= 25°C)
t
t
I
I
DS(on)1
DS(on)2
DS(on)3
C
Q
Q
C
C
GS(off)
Q
d(on)
d(off)
F(S-D)
Q
GS
DSS
GSS
0
0
t
t
t
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
t
10%
10%
d(on)
|
Data Sheet G16250EJ1V0DS
t
90%
on
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ s
D
F
F
t
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
G
DD
GS
r
= 9.5 A, V
= 9.5 A, V
= 9.5 A
V
= 10
I
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V
= 15 V, I
= 24 V
= 18 V, V
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 0 V
= 10 V
= 10 V
GS
D
t
d(off)
TEST CONDITIONS
t
off
90%
90%
GS
GS
D
D
t
D
D
D
D
GS
10%
f
= 1.0 mA
= 5.0 A
= 5.0 A
= 5.0 A
DS
= 5.0 A
= 5.0 A
= 0 V
= 0 V
= 0 V
= 0 V
PG.
TEST CIRCUIT 2 GATE CHARGE
MIN.
1.5
5.0
I
G
50
= 2 mA
TYP.
10.5
13.5
13.5
0.84
660
280
100
1.9
5.6
7.9
1.8
3.7
D.U.T.
17
19
38
13
27
19
MAX.
1.0
2.5
17
23
26
10
PA1808
R
V
UNIT
DD
L
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A