upa1808 Renesas Electronics Corporation., upa1808 Datasheet - Page 3

• Manufacturer Part Number: upa1808
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
0.01
100
80
60
40
20
0.1
10
0
1
0
0.1
FORWARD BIAS SAFE OPERATING AREA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
Single pulse
M ounted on ceram ic substrate
of 5000 m m
DS(on)
GS
25
V
T
= 10 V)
DS
I
A
D(DC)
Lim ited
- Ambient Temperature - C
- Drain to Source Voltage - V
50
1000
I
100
D(pulse)
2
10
1
x 1.1 m m
1
1 m
75
DC
Single pulse
100
PW = 1 m s
10 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
A
125
= 25°C)
10 ms
100 ms
150
100 m
175
100
Data Sheet G16250EJ1V0DS
PW - Pulse Width - s
1
Mounted on ceramic
substrate of 5000 mm
62.5 C/W
Mounted on FR-4 board of
2500 mm
125 C/W
2.5
1.5
0.5
2
1
0
10
0
2
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
x 1.6 mm
T
A
Mounted on ceramic
substrate of 5000 mm
2
- Ambient Temperature - C
100
50
x 1.1 mm
75
Mounted on FR-4 board
of 2500 mm
1000
100
125
2
2
x 1.1 mm
x 1.6 mm
150
PA1808
175
3