mt58l512y36d Micron Semiconductor Products, mt58l512y36d Datasheet - Page 14

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mt58l512y36d

Manufacturer Part Number
mt58l512y36d
Description
16mb 1 Meg X 18, 512k X 32/36 Pipelined, Dcd Syncburst Sram
Manufacturer
Micron Semiconductor Products
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
mt58l512y36d-7.5C
Manufacturer:
MICRON
Quantity:
12
Part Number:
mt58l512y36d-7.5C
Quantity:
16
3.3V V
(0ºC £ T
2.5V V
(0ºC £ T
NOTE: 1. All voltages referenced to V
16Mb: 1 Meg x 18, 512K x 32/36 Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_2.p65 – Rev 7/00
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
2. For 3.3V V
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. This parameter is sampled.
A
A
DD
DD
£ +70ºC; V
£ +70ºC; V
Overshoot:
Undershoot: V
Power-up:
For 2.5V V
Overshoot:
Undershoot: V
Power-up:
values. AC I/O curves are available upon request.
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
, 2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
DD
DD
DD
DD
:
:
= +3.3V ±0.165V; V
= +2.5V ±0.125V; V
V
V
V
V
IH
IL
IH
IH
IL
IH
³ -0.7V for t £
³ -0.5V for t £
£ +4.6V for t £
£ +3.6V and V
£ +3.6V for t £
£ +2.65V and V
OH
, V
OL
testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the shown DC
SS
(GND).
0V £ V
0V £ V
DD
t
t
KC/2 for I £ 20mA
KC/2 for I £ 20mA
Output(s) disabled,
Output(s) disabled,
t
t
DD
KC/2 for I £ 20mA
KC/2 for I £ 20mA
£ 3.135V for t £ 200ms
Data bus (DQx)
Data bus (DQx)
DD
DD
CONDITIONS
0V £ V
CONDITIONS
0V £ V
£ 2.375V for t £ 200ms
I
I
I
I
OH
OH
I
I
OH
OH
I
I
OL
OL
OL
OL
Q = +2.5V ±0.125V unless otherwise noted)
Q = +2.5V ±0.125V unless otherwise noted)
IN
IN
Inputs
Inputs
= -2.0mA
= -1.0mA
= -2.0mA
= -1.0mA
= 2.0mA
= 1.0mA
= 2.0mA
= 1.0mA
£ V
£ V
IN
IN
DD
DD
£ V
£ V
Q (DQx)
Q (DQx)
DD
DD
14
PIPELINED, DCD SYNCBURST SRAM
16Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IL
IL
V
DD
V
DD
IL
IL
IH
IH
OH
OH
OH
OH
DD
DD
OL
OL
OL
OL
IH
IH
IL
O
IL
O
Q
I
Q
I
Q
Q
3.135
2.375
2.375
2.375
MIN
MIN
-0.3
-1.0
-1.0
-0.3
-1.0
-1.0
1.7
1.7
1.7
2.0
1.7
1.7
1.7
2.0
V
V
V
V
DD
DD
DD
DD
MAX
MAX
2.625
2.625
2.625
Q + 0.3
Q + 0.3
0.7
1.0
1.0
0.7
0.4
3.6
0.7
1.0
1.0
0.7
0.4
+ 0.3
+ 0.3
UNITS
UNITS
©2000, Micron Technology, Inc.
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ADVANCE
NOTES
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
3
1
1
3
1
1

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