6am11 HITACHI, 6am11 Datasheet - Page 3

• Manufacturer Part Number: 6am11
• Description: Silicon N-channel/p-channel Power Mos Fet Array
• Manufacturer: HITACHI

Electrical Characteristics (Ta = 25°C) (1 Unit)
Item
Drain to source
breakdown voltage
Gate to source
breakdown voltage
Gate to source leak
current
Zero gate voltage drain
current
Gate to source cutoff
voltage
Static drain to source on
state resistance
Forward transfer
admittance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode
forward voltage
Body to drain diode
reverse recovery time
Note:
Pch: See characteristic curves of 2SJ172
Polarity of test conditions for P channel device is reversed.
1. Pulse Test
Symbol
V
V
I
I
V
R
|y
Ciss
Coss
Crss
t
t
t
t
V
t
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
(BR)GSS
GS(off)
DS(on)
DF
fs
|
N channel
Min
60
±20
—
—
1.0
—
—
2.7
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.13
0.18
4.5
400
220
60
5
30
170
75
1.0
100
Max
—
—
±10
250
2.0
0.17
0.24
—
—
—
—
—
—
—
—
—
—
P channel
Min
–60
±20
—
—
–1.0
—
—
2.7
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.15
0.20
5.0
900
460
130
8
35
180
85
–1.0
170
Max
—
—
±10
–250 µA
–2.0
0.2
0.27
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test conditions
I
I
V
V
I
I
V
I
I
V
V
f = 1 MHz
I
R
I
I
diF/dt = 50 A/µs
D
G
D
D
D
D
D
F
F
GS
DS
GS
DS
DS
L
= 5 A, V
= 5 A, V
= 10 mA, V
= ±100 µA, V
= 1 mA, V
= 2.5 A,
= 2.5 A, V
= 2.5 A,
= 2.5 A, V
= 12
= ±16 V, V
= 50 V, V
= 10 V*
= 10 V*
= 10 V, V
6AM11
GS
GS
1
1
= 0
DS
GS
GS
= 0,
GS
GS
GS
DS
= 10 V
= 4 V*
= 10 V,
DS
= 0
= 0,
= 0
= 0
3
= 0
1