6am11 HITACHI, 6am11 Datasheet

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6am11

Manufacturer Part Number
6am11
Description
Silicon N-channel/p-channel Power Mos Fet Array
Manufacturer
HITACHI
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
6AM11
Manufacturer:
HIP
Quantity:
20 000
Application
High speed power switching
Features
Low on-resistance
N-channel: R
P-channel: R
Capable of 4 V gate drive
Low drive current
High speed switching
High density mounting
Suitable for H-bridged motor driver
Discrete packaged devices of same die:
N-channel: 2SK970, 2SK1093
P-channel: 2SJ172, 2SJ175
Silicon N-Channel/P-Channel Power MOS FET Array
DS(on)
DS(on)
0.2 , V
0.17 , V
GS
GS
= –10 V, I
= 10 V, I
6AM11
D
D
= –2.5 A
= 2.5 A

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6am11 Summary of contents

Page 1

... Low on-resistance N-channel DS(on) P-channel DS(on) GS Capable gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor driver Discrete packaged devices of same die: N-channel: 2SK970, 2SK1093 P-channel: 2SJ172, 2SJ175 6AM11 = 2 – –2 ...

Page 2

... Outline Absolute Maximum Ratings (Ta = 25°C) (1 Unit) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes µs, duty cycle 2. 6 Device Operation 2 Symbol ...

Page 3

... Max Unit Test conditions — mA — ±100 µ ±10 µ ± – ...

Page 4

... 6AM11 4 ...

Page 5

... APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6AM11 5 ...

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