ech8501 Sanyo Semiconductor Corporation, ech8501 Datasheet - Page 2

• Manufacturer Part Number: ech8501
• Description: Pnp/npn Epitaxial Planar Silicon Transistors
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25°C
Note : The specifi cations shown above are for each individual transistor.
Switching Time Test Circuit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
I C =20I B1 = --20I B2 =2.5A
(For PNP, the polarity is reversed.)
0
0
INPUT
PW=20μs
D.C.≤1%
Parameter
Collector-to-Emitter Voltage, V CE -- V
--0.1
50Ω
V R
V BE = --5V
--0.2
I C -- V CE
I B1
100μF
I B2
R B
+
--0.3
470μF
V CC =12V
I CBO
I EBO
h FE
f T
Cob
V BE (sat)
V (BR)CBO
V (BR)EBO
t on
t stg
t f
V CE (sat)
V (BR)CEO
+
Symbol
R L
--0.4
Vout
--10mA
--8mA
--6mA
--4mA
--2mA
I B =0mA
V CB =(--)30V, I E =0A
V EB =(--)4V, I C =0A
V CE =(--)2V, I C =(--)500mA
V CE =(--)10V, I C =(--)500mA
V CB =(--)10V, f=1MHz
I C =(--)2.5A, I B =(--)125mA
I C =(--)2.5A, I B =(--)125mA
I C =(--)10μA, I E =0A
I C =(--)1mA, R BE =∞
I E =(--)10μA, I C =0A
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
IT15618
[PNP]
--0.5
ECH8501
Conditions
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Collector-to-Emitter Voltage, V CE -- V
0.1
(--30)40
min
(--)30
I C -- V CE
0.2
200
(--)6
(260)280
(--100)75
(147)220
Ratings
(--)0.85
typ
(49)32
(37)30
(14)12
0.3
(--170)110
max
(--)0.1
(--)0.1
(--)1.2
0.4
560
No. A1581-2/5
8mA
6mA
4mA
2mA
I B =0mA
10mA
[NPN]
IT15619
MHz
Unit
mV
μA
μA
pF
ns
ns
ns
V
V
V
V
0.5