ech8501 Sanyo Semiconductor Corporation, ech8501 Datasheet

no-image

ech8501

Manufacturer Part Number
ech8501
Description
Pnp/npn Epitaxial Planar Silicon Transistors
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : ENA1581
ECH8501
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-007
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Composite type, facilitating high-density mounting
Low collector-to-emitter saturation voltage
Halogen free compliance
1
8
0.65
Bot t om View
Parameter
Top View
2.9
( ): PNP
5
4
0.3
1 : Emitter(NPN TR)
2 : Base(NPN TR)
3 : Emitter(PNP TR)
4 : Base(PNP TR)
5 : Collector(PNP TR)
6 : Collector(PNP TR)
7 : Collector(NPN TR)
8 : Collector(NPN TR)
SANYO : ECH8
0.15
PNP/NPN Epitaxial Planar Silicon Transistors
Gate Drive Applications
V CBO
V CEO
V EBO
I C
I B
P T
Tj
Tstg
I CP
P C
0 t o 0.02
Symbol
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤1μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
NPN : V CE (sat)=0.075V(typ.)@I C =2.5A
PNP : V CE (sat)= - -0.1V(typ.)@I C = - -2.5A
ECH8501
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Mounting height 0.9mm
Conditions
8
1
7
2
TL
6
3
2
×0.8mm) 1unit
2
5
4
×0.8mm)
72110EA TK IM TC-00002441
DATA SHEET
: ECH8
: -
Marking
Ratings
--55 to +150
MA
LOT No.
(--30)40
(--)600
(--)30
(--)30
(--)6
(--)5
150
1.3
1.6
No. A1581-1/5
Unit
mA
°C
°C
W
W
A
A
V
V
V

Related parts for ech8501

ech8501 Summary of contents

Page 1

... Emitter(PNP TR Base(PNP TR Collector(PNP TR Collector(PNP TR Collector(NPN TR Collector(NPN TR) SANYO : ECH8 Bot t om View ECH8501 SANYO Semiconductors PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications Mounting height 0.9mm • NPN : V CE (sat)=0.075V(typ.)@I C =2.5A PNP : V CE (sat)= - -0.1V(typ.)@ -2.5A ...

Page 2

... --5.0 --4.5 --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 --0.1 --0.2 --0.3 Collector-to-Emitter Voltage ECH8501 Symbol Conditions I CBO V CB =(--)30V =0A I EBO V EB =(--)4V = =(--)2V =(--)500mA =(--)10V =(--)500mA Cob V CB =(--)10V, f=1MHz V CE (sat =(--)2.5A =(--)125mA V BE (sat =(--)2.5A =(--)125mA V (BR)CBO I C =(--)10μ ...

Page 3

... Collector Current (sat --100 -- --0 --1.0 --0.01 Collector Current ECH8501 [PNP -- --1.0 --1.2 0 0.2 IT15620 [PNP] 1000 --0. 100 --10 0.01 ...

Page 4

... Collector-to-Base Voltage 100 --0.01 --0.1 --1.0 Collector Current ECH8501 [PNP =50 2 100 --10 0.01 IT15628 [PNP = ...

Page 5

... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2010. Specifi cations and information herein are subject to change without notice. ECH8501 [PNP/NPN] 1.8 ≤1µs 1.6 100µ ...

Related keywords