tsm5n50czc0 Taiwan Semiconductor Company, Ltd. (TSC), tsm5n50czc0 Datasheet - Page 2

• Manufacturer Part Number: tsm5n50czc0
• Description: 500v N-channel Power Mosfet
• Manufacturer: Taiwan Semiconductor Company, Ltd. (TSC)

Electrical Specifications
Notes:
1. Pulse test: pulse width ≤300uS, duty cycle ≤2%
2. I
3. V
4. For design reference only, not subject to production testing.
5. Switching time is essentially independent of operating temperature.
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
SD
DD
<4.5A, di/dt<200A/us, VDD<BV
= 50V, V
b
c
GS
=10V, I
AS
=4.5A, L=27mH, R
(Ta = 25
DSS
o
C unless otherwise noted)
V
V
V
V
V
V
I
V
V
V
f = 1.0MHz
V
V
V
dI
S
GS
GS
DS
DS
GS
DS
DS
GS
DS
GS
DD
GS
F
= 4.5A, V
/dt = 100A/us
= V
= 500V, V
= 50V, I
= 250V, I
= 25V, V
= 0V, I
= 10V, I
= 10V
= 10V, I
= 250V, R
= 0V, I
= ±30V, V
G
Conditions
=25Ω
GS
, I
D
S
D
GS
D
D
D
= 4.5A,
= 250uA
GS
= 250uA
D
= 2.2A
= 2.2A
= 4.5A,
GS
= 0V
G
DS
= 4.5A,
= 0V,
= 25Ω
2/6
= 0V
= 0V
500V N-Channel Power MOSFET
Symbol
R
V
BV
t
t
I
C
DS(ON)
GS(TH)
I
V
C
C
Q
Q
d(on)
d(off)
Q
DSS
GSS
g
Q
t
t
t
oss
SD
iss
rss
fr
DSS
fs
gd
r
gs
f
g
fr
Min
500
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
1.36
1.26
470
215
3.4
6.4
8.5
13
75
13
55
25
35
--
--
--
--
--
4
TSM5N50
Max
±100
1.8
5.0
1.4
610
120
17
95
11
35
60
80
--
--
1
--
--
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Version: A07
Unit
uA
nA
nC
nS
uC
pF
Ω
V
V
S
V