tsm5n50czc0 Taiwan Semiconductor Company, Ltd. (TSC), tsm5n50czc0 Datasheet
tsm5n50czc0
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tsm5n50czc0 Summary of contents
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TO-220 General Description The TSM5N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche ...
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Electrical Specifications ( Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance ...
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Electrical Characteristics Curve Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 500V N-Channel Power MOSFET o ( unless otherwise noted) Source-Drain Diode Forward Voltage 3/6 TSM5N50 Transfer Characteristics Gate Charge Version: A07 ...
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Electrical Characteristics Curve On-Resistance vs. Gate-Source Voltage Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 500V N-Channel Power MOSFET o ( unless otherwise noted) 4/6 TSM5N50 Threshold Voltage Version: A07 ...
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Marking Diagram 500V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, ...
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Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...