tga2509-epu-fl TriQuint Semiconductor, tga2509-epu-fl Datasheet - Page 10

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tga2509-epu-fl

Manufacturer Part Number
tga2509-epu-fl
Description
Wideband Packaged Hpa With Agc
Manufacturer
TriQuint Semiconductor
Datasheet
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
RF In
Bias Procedures:
Vc bias connection is optional, but the 0.1uF cap always needs to be connected.
For biasing without AGC control:
1. Apply -1.2V to Vg1, and -1.2V to Vg2.
2. Apply +12V to Vd.
4. Adjust Vg1 to attain 580 mA drain current (Id)
4. Adjust Vg2 to attain 1080 mA total drain current (Id).
For biasing with AGC control:
1. Apply -1.2V to Vg1 and -1.2V to Vg2
2. Apply +12V to Vd
3. Apply +2.6V to Vc
4. Adjust Vg1 to attain 580 mA drain current (Id)
5. Adjust Vg2 to attain 1080 mA total drain current (Id).
6. Adjust Vc as needed to control gain level.
Vc
Vg1
Evaluation Board Drawing
Advance Product Information
September 15, 2004
TGA2509-EPU-FL
RF Out
Vd
Vg2
10

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