blf2022-70 NXP Semiconductors, blf2022-70 Datasheet - Page 6

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blf2022-70

Manufacturer Part Number
blf2022-70
Description
Uhf Power Ldmos Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, full pagewidth
UHF power LDMOS transistor
V
Fig.8
input
50
DS
( )
= 28 V; I
Z i
8
6
4
2
0
2
1.8
Input impedance as a function of frequency
(series components); typical values.
D
= 500 mA; P
L20
C3
2
L1
C4
L
= 65 W; T
L2
L3
C2
L5
h
L4
2.2
R1
L6
25 C.
C1
Fig.10 Class-AB test circuit at f = 2.2 GHz.
L7
x i
r i
f (GHz)
C5
L8
MLD829
L9
V gate
2.4
L10
6
handbook, halfpage
L11
V
Fig.9
DS
L12
( )
Z L
= 28 V; I
L13
4
2
0
2
4
6
1.8
Load impedance as a function of frequency
(series components); typical values.
D
L14
= 500 mA; P
C10
L15
C9
C6
L16
2
C11
L
= 65 W; T
L17
L18
C7
C12
C8
h
R2
F1
2.2
25 C.
L19
BLF2022-70
Product specification
f (GHz)
MGS920
C13
R L
X L
MLD830
output
50
2.4
C14
V DD

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