blf2022-70 NXP Semiconductors, blf2022-70 Datasheet - Page 4

• Manufacturer Part Number: blf2022-70
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Feb 24
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
f
Fig.2
V
f
(1) I
(2) I
Fig.4
1
1
DS
DS
= 2170 MHz; f
= 2170 MHz; f
(dB)
(dB)
G p
G p
= 28 V; I
= 28 V; T
15
10
DQ
DQ
15
10
5
0
5
0
0
0
= 600 mA.
= 500 mA.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
DQ
h
= 500 mA; T
2
2
25 C;
20
20
= 2170.1 MHz.
= 2170.1 MHz.
(1)
(3) I
(4) I
G p
(2)
(3)
DQ
DQ
40
40
h
= 400 mA.
= 400 mA.
25 C;
D
60
60
(4)
P L (PEP) (W)
P L (PEP) (W)
(5) I
(6) I
(5)
80
80
DQ
DQ
(6)
MGW532
MGW530
= 500 mA.
= 600 mA.
100
100
60
40
20
0
60
40
20
0
(%)
(%)
D
D
4
handbook, halfpage
handbook, halfpage
V
f
Fig.3
V
f
(1) I
Fig.5
1
1
DS
(dBc)
DS
(dBc)
= 2170 MHz; f
= 2170 MHz; f
d im
d 3
= 28 V; I
= 28 V; T
20
40
60
80
20
40
60
80
DQ
0
0
0
0
= 400 mA.
Intermodulation distortion as a function of
peak envelope load power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
DQ
h
= 500 mA; T
2
2
25 C;
20
20
= 2170.1 MHz.
= 2170.1 MHz.
(1)
(2)
(3)
(2) I
40
40
DQ
h
= 500 mA.
25 C;
60
60
P L (PEP) (W)
P L (PEP) (W)
BLF2022-70
Product specification
(3) I
d 3
d 5
d 7
80
80
DQ
MGW531
MGW533
= 600 mA.
100
100