tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 8

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q2(Includes Schottky Barrier Diode)
10
100
0.1
20
16
12
10
8
6
4
2
0
8
4
0
1
0
0.1
0
10
8
6
4
1
3.5
0.2
Drain-source voltage V
Gate-source voltage V
100
3
25
Drain current I
2
1
Common source
Ta = 25°C
Pulse test
0.4
Tａ=-55℃
I
I
|Y
D
D
2.6
Tａ=-55℃
fs
– V
– V
3
| – I
DS
GS
D
0.6
D
Common source
V DS = 10 V
Pulse test
100
4
GS
10
DS
(A)
2.5
Common source
V DS = 10 V
Pulse test
(V)
(V)
0.8
25
5
VGS=2.0V
2.4
2.3
2.1
2.2
6
100
1
8
1000
0.6
0.5
0.4
0.3
0.2
0.1
100
20
16
12
10
8
4
0
0
1
0
0
0.1
10
8
6
4
2
3
1
Drain-source voltage V
Gate-source voltage V
Drain current I
4
1
R
2
V
DS (ON)
I
DS
D
– V
– V
6
DS
GS
– I
3
D
2.8
Common source
Ta = 25°C
Pulse test
D
VGS=4.5V
VGS=10V
GS
10
DS
8
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(V)
(V)
2.7
4
ID=8.5A
10
4.3
2.1
2006-11-16
TPC8A01
VGS=2.1V
2.5
2.6
2.4
2.3
2.2
100
12
5