tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 6

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
10000
1000
50
40
30
20
10
100
0
1.6
1.2
0.8
0.4
-80
10
2
0
1
0
0.1
(1)
(2)
(3)
(4)
-40
VGS=4.5V
40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
Capacitance – V
0
Device mounted on a glass-epoxy board (
(Note 2a)
Device mounted on a glass-epoxy board
(b) (Note 2b)
10V
R
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
1
80
DS (ON)
t = 10 s
P
operation (Note 3b)
operation (Note 3b)
D
40
– Ta
– Ta
120
ID=6A
80
DS
DS
Common source
Pulse test
10
ID=1.5,3,6A
Common source
Ta = 25°C
f = 1MHz
V GS = 0 V
3
(V)
Ciss
160
120
Crss
1.5
Coss
a)
200
160
100
6
40
30
20
10
100
0.1
0
10
1
0
3
2
1
0
-80
0
VDS
Dynamic input/output characteristics
-
5
0.2
-40
Drain-source voltage V
Ambient temperature Ta (°C)
10
Total gate charge Q
-
10
0.4
0
5
I
DR
V
3
th
1
-
– V
15
0.6
– Ta
40
6
DS
VGS
0
g
-
20
0.8
Common source
I D = 6 A
Ta = 25°C
Pulse test
DS
VGS=-1V
12
80
(nC)
Common source
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
VDD=24V
(V)
-
25
1
120
2006-11-16
TPC8A01
-
1.2
30
160
40
30
20
10
0