tpc8a01 TOSHIBA Semiconductor CORPORATION, tpc8a01 Datasheet - Page 7

• Manufacturer Part Number: tpc8a01
• Description: Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Q1
I D max (pulse) *
Curves must be derated linearly
with increase in temperature.
* Single pulse Ta = 25°C
Drain-source voltage V
1000
500
300
100
Safe operating area
0.5
0.3
0.1
50
30
10
0.001
5
3
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
Single-device value at dual
operation
10 ms *
0.01
V DSS max
DS
(V)
1 ms *
(Note 3b)
0.1
Pulse width t
r
th
7
− t
1
w
w
(S)
10
100
(4)
(3)
(2)
(1)
Single pulse
1000
2006-11-16
TPC8A01