tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet - Page 5

• Manufacturer Part Number: tpc8209
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Ii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
80
60
40
20
1.5
1.0
0.5
10
0
-80
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 10 V
I D = 1 mA
Pulse test
(1)
(2)
(3)
(4)
-40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VGS=4V
50
Capacitance – V
0
R
1
DS (ON)
P
D
100
ID=5.0A
10V
40
– Ta
t = 10 s
(1) Device mounted on a
(2) Device mounted on a
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
DS
80
DS
10
ID=1.3/2.5/5.0A
2.5
150
1.3
(V)
Ciss
120
Coss
Crss
200
160
100
5
100
0.1
10
1
5
4
3
2
1
0
40
30
20
10
-80
0
0
0
VDS
10
Dynamic input/output characteristics
-40
-
5
0.4
Drain-source voltage V
Ambient temperature Ta (°C)
3
Total gate charge Q
1
0
10
VGS
-
0.8
5
I
DR
V
VGS=0V,-1V
th
40
– V
15
– Ta
DS
-
6
1.2
VDD=24V
g
80
20
DS
Common source
Ta = 25°C
I
Pulse test
D
(nC)
Common source
Ta = 25°C
Pulse test
Common source
V
f = 1 mA
Pulse test
= 8 A
12
DS
(V)
-
= 10 V
1.6
120
25
2003-02-18
TPC8209
160
30
-
2
40
30
20
10
0