tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet - Page 2

• Manufacturer Part Number: tpc8209
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Ii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking (Note 6)
Thermal resistance, channel to ambient
(t = 10s)
Thermal resistance, channel to ambient
(t = 10s)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
Note 3:
Note 4: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: · on lower left of the marking indicates Pin 1.
a)
a) The power dissipation and thermal resistance values are shown for a single device.
b) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
TPC8209
Device mounted on a glass-epoxy board (a)
* Weekly code:
DD
= 24 V, T
*
(a)
ch
Characteristics
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
Type
Lot No.
= 25°C (initial), L = 1.0 mH, R
(Note 1a) Single-device value at
(Note 2b) Single-device value at
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(Three digits)
Single-device operation
dual operation
Single-device operation
dual operation
(Note 2a)
(Note 2b)
(Note 2a)
(Note 2b)
G
2
b)
= 25 , I
R
R
R
R
Device mounted on a glass-epoxy board (b)
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
AR
= 5 A
(b)
83.3
Max
114
167
278
°C/W
Unit
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
2003-02-18
TPC8209