tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet - Page 4

• Manufacturer Part Number: tpc8209
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Ii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

12
100
0.1
8
4
0
10
10
1
8
6
4
2
0
0
0.1
0
1
0.2
10
8
Drain-source voltage V
100
Gate-source voltage V
Drain current I
2
T=-55Ä
1
6
0.4
25
I
I
|Y
D
D
4
fs
– V
– V
| – I
3
100
GS
DS
T=-55Ä
D
0.6
D
3.5
GS
10
DS
4
(A)
C om m on source
Ta = 25°C
P ulse test
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
(V)
(V)
0.8
25
5
VGS=2.5V
3.2
3.1
3.0
2.9
2.8
2.7
2.6
100
1
6
4
0.6
0.5
0.4
0.3
0.2
0.1
1000
20
16
12
100
8
4
0
0
10
1
0
0
0.1
8
6
10
2
1
Drain-source voltage V
Gate-source voltage V
4
Drain current I
4
1
R
V
DS (ON)
2
I
DS
D
– V
– V
6
DS
GS
– I
VGS=4V
D
3
D
GS
DS
(A)
8
10
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
3.5
10
Common source
Ta = 25°C
Pulse test
(V)
(V)
3.2
4
10
ID=5A
2.5
1.3
2003-02-18
TPC8209
3.1
VGS=2.5V
3.0
2.9
2.8
2.6
2.7
12
5
100