tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet - Page 6

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tpc8108

Manufacturer Part Number
tpc8108
Description
Silicon P Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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0.01
100
0.1
10
1
0.01
* Single pulse
Curves must be derated
linearly with increase in
temperature.
I D max (pulse) *
Ta
25°C
Drain-source voltage V
0.1
1000
100
Safe operating area
0.1
10
0.001
1
(1)
(2)
t
10 s
Device mounted on a glass-epoxy board (a)
(Note 2a)
Device mounted on a glass-epoxy board (b)
(Note 2b)
1
10 ms*
0.01
DS
V DSS max
10
(V)
1 ms*
0.1
100
Pulse width t
r
th
6
1
t
w
w
(S)
10
100
Single pulse
(2)
(1)
1000
2002-03-12
TPC8108

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