tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet - Page 4

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tpc8108

Manufacturer Part Number
tpc8108
Description
Silicon P Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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100
0.3
20
16
12
50
40
30
20
10
30
10
8
4
0
0
3
1
0.1
0
0
6
8
10
0.3
Drain-source voltage V
0.2
Gate-source voltage V
100
1
25
Drain current I
Ta
1
4
0.4
Ta
2
I
I
|Y
D
D
55°C
3
fs
– V
– V
| – I
3
25
55°C
2.8
GS
DS
D
2.6
0.6
D
3
100
GS
DS
10
(A)
Common source
V DS
Pulse test
Common source
Ta
Pulse test
Common source
V DS
Pulse test
V GS
(V)
(V)
0.8
25°C
4
30
10 V
2.4
2.2
10 V
2 V
100
1.0
5
4
100
0.5
0.4
0.3
0.2
0.1
0.3
50
40
30
20
10
30
10
0
0
3
1
0.1
0
0
10
0.3
Drain-source voltage V
Gate-source voltage V
1
4
4
8
6
Drain current I
3
1
R
V
DS (ON)
2
8
I
DS
D
– V
– V
3
2.8
DS
GS
– I
D
12
3
V GS
D
2.6
GS
10
DS
(A)
Common source
Ta
Pulse test
Common source
Ta
Pulse test
Common source
Ta
Pulse test
I D
10
4 V
(V)
(V)
V GS
25°C
16
25°C
25°C
4
2.4
2.2
11 A
30
5.5
2.5
2002-03-12
TPC8108
2 V
100
20
5

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