tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet - Page 2

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tpc8108

Manufacturer Part Number
tpc8108
Description
Silicon P Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Thermal Characteristics
Marking
Thermal resistance, channel to ambient
(t
Thermal resistance, channel to ambient
(t
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating; pulse width limited by maximum channel temperature
Note 5:
10 s)
10 s)
TPC8108
(Note 5)
manufacture: January to December are denoted by letters A to L respectively.)
DD
on lower left of the marking indicates Pin 1.
shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
Characteristics
24 V, T
(a)
ch
TYPE
25°C (initial), L
25.4
(Note 2a)
(Note 2b)
FR-4
(unit: mm)
25.4
0.8
R
R
Symbol
1.0 mH, R
th (ch-a)
th (ch-a)
2
G
65.8
Max
125
25
(b) Device mounted on a glass-epoxy board (b)
, I
°C/W
°C/W
Unit
AR
11 A
(b)
25.4
FR-4
(unit: mm)
25.4
0.8
2002-03-12
TPC8108

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