tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet - Page 6

• Manufacturer Part Number: tpcp8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
10000
1000
100
100
1.6
2.0
1.2
0.8
0.4
80
60
40
20
10
−80
−0.1
0
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = −4.5 V
(4)
(1)
(2)
(3)
V GS = −10 V
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Capacitance – V
−1
0
R
DS (ON)
Device mounted on a glass-epoxy
board (a)
Device mounted on a glass-epoxy
board (b)
t = 5 s
P
(3) Single-device operation
(4) Single-device value at dual
(1) Single-device operation (Note 3a)
(2) Single-device value at dual
D
100
operation
40
operation
– Ta
– Ta
−10
80
DS
I D = −1, −2, −4 A
DS
150
−4
I D = −1, −2 A
(V)
120
C oss
C rss
C iss
(Note 2a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
−100
160
200
6
−0.1
−2.0
−1.6
−1.2
−0.8
−0.4
−10
−30
−25
−20
−15
−10
−1
−5
−80
0
0
0
0
V DD = −24 V
−6
−12
−10
V DS
0.2
Drain−source voltage V
−40
Ambient temperature Ta (°C)
Total gate charge Q
4
Dynamic input/output
−4.5
0.4
0
characteristics
I
8
DR
−3
V
th
0.6
– V
40
– Ta
−1
DS
12
−6
0.8
80
g
−12
DS
Common source
V DS = −10 V
I D = −1m A
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 0 V
Common source
I D = −4 A
Ta = 25°C
Pulse test
(nC)
V DD = −24 V
16
V GS
(V)
120
TPCP8404
1
2010-02-01
160
1.2
20
−30
−25
−20
−15
−10
−5
0