tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet - Page 2
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tpcp8404
Manufacturer Part Number
tpcp8404
Description
Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8404.pdf
(11 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCP8404
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
tpcp8404,LF
Manufacturer:
TOSHIBA
Quantity:
32 000
Thermal Characteristics
Thermal resistance,
channel to ambient
(t = 5 s)
Thermal resistance,
channel to ambient
(t = 5 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
Note 4: P Channel: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: ● on the lower left of the marking indicates Pin 1.
b)
※ Weekly code (3 digits):
N Channel: V
(Note 2a) Single-device value at
(Note 2b) Single-device value at
(During single-device operation, power is only applied to one device.)
The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Characteristics
25.4
(a)
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
DD
DD
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= −24 V, T
= 24 V, T
ch
(Note 3a)
(Note 3a)
ch
= 25°C (initial), L = 0.5 mH, R
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
2
101.6
215.5
347.2
84.5
Max
(b) Device mounted on a glass-epoxy board (b)
G
°C/W
°C/W
G
Unit
= 25 Ω, I
= 25 Ω, I
(b)
AR
AR
= 2 A
= −2 A
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8404
2010-02-01