tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet - Page 3

• Manufacturer Part Number: tpcp8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-ch
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty ≤ 1%, t
V
I
I
D
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −4 A
3
= −4 A, V
(Ta = 25°C)
−10 V
= ±20 V, V
= −30 V, V
= −10 V, I
= −4.5 V, I
= −10 V, I
= −10 V, I
= −10 V, V
≈ −24 V, V
0 V
Test Condition
Test Condition
w
GS
= 10 μs
D
D
D
GS
GS
D
DS
GS
GS
GS
= −1 mA
= −2.0 A
= −2.0 A
⎯
= 0 V
= −2.0 A
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
V
I
D
DD
= −2 A
≈ −15 V
V
OUT
−0.8
Min
−30
−10
Min
3.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
Typ.
510
110
170
7.3
1.7
4.6
58
38
11
20
37
99
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCP8404
2010-02-01
±100
−2.0
Max
Max
−10
−16
1.2
80
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
A
V
V
V
S