tpcp8008-h TOSHIBA Semiconductor CORPORATION, tpcp8008-h Datasheet - Page 4

• Manufacturer Part Number: tpcp8008-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
10
10
0.1
10
8
6
4
2
0
8
6
2
0
4
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
Drain-source voltage V
Gate-source voltage V
Ta = −55°C
0.2
1
Drain current I
6
1
4
3.4
100
3.6
0.4
2
⎪Y
I
I
D
D
100
fs
– V
– V
⎪ – I
25
DS
GS
0.6
D
3
D
Ta = −55°C
3.1
10
25
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.6 V
0.8
(V)
(V)
4
3.2
2.9
2.8
3
100
1
5
4
0.3
0.2
0.1
100
20
16
12
10
8
4
0
0
1
0.1
0
0
Common source
Ta = 25 ℃
Pulse test
10
Drain-source voltage V
Gate-source voltage V
6
0.4
2
4
Drain current I
1
2
R
V GS = 10 V
3.6
V
0.8
DS (ON)
4
I
DS
D
4.5
4
– V
– V
DS
I D = 8 A
GS
– I
1.2
6
D
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
TPCP8008-H
V GS = 2.7 V
1.6
(V)
(V)
8
2010-03-09
3.2
3.4
3.0
100
10
2