tpcp8008-h TOSHIBA Semiconductor CORPORATION, tpcp8008-h Datasheet
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tpcp8008-h
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tpcp8008-h Summary of contents
Page 1
... 150 °C ch −55 to 150 T °C stg 1 TPCP8008-H Unit: mm 0.33 ± 0.05 0. 0.475 0. 0.65 2.9 ± 0.1 A 0.8 ± 0.05 0.025 S S +0.1 0.17 ± 0.02 0.28 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 0.28 +0.1 -0.11 1,2,3 :SOURCE 4 :GATE 5,6,7,8: ...
Page 2
... Year of manufacture (The last digit of the year) Symbol Max Unit R 74.4 °C/W th (ch-a) (Note 2a) R 148.8 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCP8008-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2010-03-09 ...
Page 3
... gs1 ≈ (Ta = 25°C) Symbol Test Condition ⎯ DSF TPCP8008-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.3 2.3 ⎯ ⎯ ⎯ ...
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... Drain-source voltage V 0.3 0.2 0 Gate-source voltage V 100 Common source ℃ Pulse test 10 1 100 0.1 Drain current I 4 TPCP8008-H I – Common source 3 25°C Pulse test 3.4 3.2 3 2.7 V 0.8 2 1.2 1.6 ( – Common source Ta = 25℃ Pulse test ...
Page 5
... Common source 0 0.1 mA Pulse test 0 −80 −40 100 ( 160 200 0 C) ° 5 TPCP8008-H I – 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 ( – ...
Page 6
... Safe operating area 100 I D max (Pulse 0.1 * Single pulse Ta = 25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.01 0 Drain-source voltage V ( – 0 Pulse width t (s) w 100 6 TPCP8008-H (2) (1) Single - pulse 100 1000 2010-03-09 ...
Page 7
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8008-H 2010-03-09 ...