tpcp8008-h TOSHIBA Semiconductor CORPORATION, tpcp8008-h Datasheet - Page 2

• Manufacturer Part Number: tpcp8008-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: * Weekly code: (Three digits)
DD
= 24 V, T
Characteristic
ch
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
= 25 °C (initial), L = 500 μH, R
(a)
(Note 2a)
(Note 2b)
25.4 × 25.4 × 0.8
(Unit: mm)
FR-4
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
148.8
= 1 Ω, I
74.4
Max
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 8 A
(b)
25.4 × 25.4 × 0.8
(Unit: mm)
TPCP8008-H
FR-4
2010-03-09