gs88136bgt-333i GSI Technology, gs88136bgt-333i Datasheet - Page 30

• Manufacturer Part Number: gs88136bgt-333i
• Description: 512k X 18, 256k X 32, 256k X 36 9mb Sync Burst Srams
• Manufacturer: GSI Technology

JTAG Port Recommended Operating Conditions and DC Characteristics
Rev: 1.06 6/2007
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
Input Under/overshoot voltage must be –2 V < Vi < V
V
0 V ≤ V
Output Disable, V
The TDO output driver is served by the V
I
I
I
I
Parallel SRAM input
OHJ
OLJ
OHJC
OLJC
ILJ
= + 4 mA
= –4 mA
≤ V
= –100 uA
= +100 uA
IN
IN
TMS, TCK and TDI Input Leakage Current
TMS, TCK and TDI Input Leakage Current
≤ V
≤ V
3.3 V Test Port Input High Voltage
2.5 V Test Port Input High Voltage
3.3 V Test Port Input Low Voltage
2.5 V Test Port Input Low Voltage
TMS
TDO
TCK
ILJn
TDO Output Leakage Current
Test Port Output High Voltage
Test Port Output Low Voltage
DDn
TDI
Test Port Output CMOS High
Test Port Output CMOS Low
OUT
= 0 to V
Parameter
DDn
tTKC
tTKC
DDQ
tTKQ
supply.
JTAG Port Timing Diagram
tTS
tTS
tTS
DDn
30/38
+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tTKC.
tTH
tTH
tTH
tTKH
tTKH
GS88118B(T/D)/GS88132B(T/D)/GS88136B(T/D)
Symbol
V
V
V
V
V
V
V
I
V
I
I
INHJ
OHJC
INLJ
OLJC
OLJ
IHJ3
IHJ2
ILJ3
ILJ2
OHJ
OLJ
V
tTKL
tTKL
DDQ
0.6 * V
Min.
–300
–0.3
–0.3
– 100 mV
2.0
1.7
–1
–1
—
—
DD2
0.3 * V
V
V
100 mV
DD3
DD2
Max.
100
0.8
0.4
—
—
1
1
+0.3
+0.3
DD2
© 2002, GSI Technology
Unit Notes
uA
uA
uA
V
V
V
V
V
V
V
V
5, 6
5, 7
5, 8
5, 9
1
1
1
1
2
3
4