m470l3224dt0 Samsung Semiconductor, Inc., m470l3224dt0 Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
m470l3224dt0
Manufacturer Part Number
m470l3224dt0
Description
256mb Ddr Sdram Module
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.M470L3224DT0.pdf
(12 pages)
Input/Output CAPACITANCE
M470L3224DT0
Input capacitance(A
Input capacitance(CKE
Input capacitance( CS
Input capacitance( CLK
Data & DQS input/output capacitance(DQ
Input capacitance(DM
0
Parameter
~ A
0
0
~DM
0
, CS
0
)
, CLK
11
, BA
1
8
)
)
1
Output
)
0
~ BA
(V
DD
1
,RAS,CAS, WE )
=2.5V, V
Output Load Circuit (SSTL_2)
0
~DQ
Z0=50
63
DDQ
)
C
LOAD
=2.5V, T
=30pF
V
tt
=0.5*V
A
Symbol
= 25
C
C
C
C
C
C
OUT
IN1
IN2
IN3
IN4
IN5
R
DDQ
T
=50
C
, f=1MHz)
200pin DDR SDRAM SODIMM
V
=0.5*V
REF
DDQ
Min
36
36
26
34
12
12
Rev. 0.1 Jan. 2002
Max
44
44
30
38
14
14
Unit
pF
pF
pF
pF
pF
pF