k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 36

• Manufacturer Part Number: k9f1g08q0a
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0A
K9F1G08U0A
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 17). Its value can be
determined by the following guidance.
tr,tf [s]
200n
100n
Rp value guidance
V
300n
CC
GND
where I
Rp(max) is determined by maximum permissible limit of tr
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
@ Vcc = 1.8V, Ta = 25 C , C
L
is the sum of the input currents of all devices tied to the R/B pin.
1.7
1K
30
1.7
Device
Ibusy
open drain output
tf
tr
60
0.85
2K
1.7
R/B
Rp(ohm)
Rp
V
V
CC
CC
90
(Max.) - V
(Max.) - V
3K
1.7
Figure 17. Rp vs tr ,tf & Rp vs ibusy
ibusy
0.57
I
I
OL
OL
L
C
= 30pF
+ I
+ I
L
1.7
OL
OL
0.43
L
L
120
4K
(Max.)
(Max.)
Ready Vcc
Ibusy [A]
=
=
2m
3m
1m
36
tr,tf [s]
100n
200n
300n
tf
3mA + I
8mA + I
1.85V
1.8V device - V
3.3V device - V
3.2V
VOL
L
L
2.4
1K
50
1.8
@ Vcc = 3.3V, Ta = 25 C , C
Ibusy
Busy
OL
OL
tf
tr
: 0.1V, V
: 0.4V, V
100
1.2
2K
1.8
FLASH MEMORY
OH
OH
Rp(ohm)
: V
: 2.4V
CC
150
0.8
3K
1.8
-0.1V
tr
L
VOH
= 50pF
0.6
200
1.8
4K
Ibusy [A]
2m
3m
1m