k9f1g08q0a Samsung Semiconductor, Inc., k9f1g08q0a Datasheet - Page 11

• Manufacturer Part Number: k9f1g08q0a
• Description: 128m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0A
K9F1G08U0A
Program / Erase Characteristics
NOTE : 1. Max. time of
AC Timing Characteristics for Command / Address / Data Input
NOTE : 1. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
ALE to Data Loading Time
Program Time
Dummy Busy Time for Cache Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
t
CBSY
Parameter
depends on timing between internal program completion and data in
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
ADL
WC
CH
WP
DH
WH
CS
DS
Spare Array
Main Array
K9F1G08Q0A
100
25
10
35
10
25
25
10
20
10
45
15
(1)
Symbol
t
t
t
PROG
CBSY
Nop
BERS
11
Min
K9F1G08U0A
100
10
15
15
10
10
30
10
5
5
5
5
(1)
Min
-
-
-
-
K9F1G08Q0A
Typ
300
3
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
Max
700
700
K9F1G08U0A
4
4
3
-
-
-
-
-
-
-
-
-
-
-
-
cycles
cycles
Unit
ms
s
s
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns