mt16hts25664hy-53e Micron Semiconductor Products, mt16hts25664hy-53e Datasheet - Page 2

• Manufacturer Part Number: mt16hts25664hy-53e
• Description: 2gb, 4gb X64, Dr 200-pin Ddr2 Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

Table 2:
Table 3:
Table 4:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256_512x64H.fm - Rev. B 10/07 EN
Parameter
Part Number
Part Number
Refresh count
Row address
Device bank address
Device configuration
Column address
Module rank address
MT16HTS25664HY-667__
MT16HTS25664HY-53E__
MT16HTS25664HY-40E__
MT16HTS51264HY-667__
MT16HTS51264HY-53E__
Addressing
Part Numbers and Timing Parameters – 2GB
Base device: MT47H256M8THJ,
Part Numbers and Timing Parameters – 4GB
Base device: MT47H512M8THM,
2
2
Notes:
1. Data sheets for the base devices can be found on Micron’s Web site.
2. All part numbers end with a two-place code (not shown) that designates component and
Module
Density
Module
Density
PCB revisions. Consult factory for current revision codes.
Example: MT16HTS51264HY-667A1.
2GB
2GB
2GB
4GB
4GB
1
1
2Gb TwinDie DDR2 SDRAM
Configuration
Configuration
256 Meg x 64
256 Meg x 64
256 Meg x 64
512 Meg x 64
512 Meg x 64
4Gb TwinDie DDR2 SDRAM
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
2Gb TwinDie (128 Meg x 8)
2
16K (A0–A13)
8 (BA0–BA2)
1K (A0–A9)
2 (S0#, S1#)
2GB
Bandwidth
Bandwidth
8K
Module
Module
5.3 GB/s
4.3 GB/s
3.2 GB/s
5.3 GB/s
4.3 GB/s
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Memory Clock/
Memory Clock/
3.75ns/533 MT/s
3.75ns/533 MT/s
3.0ns/667 MT/s
5.0ns/400 MT/s
3.0ns/667 MT/s
Data Rate
Data Rate
4Gb TwinDie (256 Meg x 8)
©2006 Micron Technology, Inc. All rights reserved.
32K (A0–A14)
8 (BA0–BA2)
1K (A0–A9)
2 (S0#, S1#)
4GB
8K
(CL-
(CL-
Clock Cycles
Clock Cycles
t
t
5-5-5
4-4-4
3-3-3
5-5-5
4-4-4
Features
RCD-
RCD-
t
t
RP)
RP)