mt8vddt6464hg-40b Micron Semiconductor Products, mt8vddt6464hg-40b Datasheet - Page 15

• Manufacturer Part Number: mt8vddt6464hg-40b
• Description: 256mb, 512mb X64, Sr Pc3200 200-pin Ddr Sodimm
• Manufacturer: Micron Semiconductor Products

Table 14: Capacitance
Note: 11; notes appear on pages 17–19
Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 17–19; 0°C
pdf: 09005aef80b577e4, source: 09005aef80921669
DDA8C32_64x64HG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to READ with Auto precharge command
ACTIVE to PRECHARGE command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
PARAMETER
Input/Output Capacitance: DQ, DQS, DM
Input Capacitance: Command and Address, S#, CKE
Input Capacitance: CK, CK#
Operating Conditions
CL = 3
CL = 2.5
CL = 2
T
A
15
+70°C; V
256MB, 512MB (x64, SR) PC3200
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DD
t
CK (2.5)
t
t
t
t
SYMBOL
t
DQSCK
t
t
CK (3)
CK (2)
DQSQ
t
DQSH
DIPW
t
t
DQSL
DQSS
t
t
t
t
MRD
t
t
t
QHS
t
t
DSH
t
t
t
t
RAP
t
IPW
RAS
t
t
DSS
t
t
t
RFC
QH
DH
AC
CH
DS
HP
HZ
IH
IH
RC
= V
CL
LZ
IS
IS
C
C
C
F
S
F
S
IO
I1
I2
DD
Q = +2.6V ±0.1V
200-PIN DDR SODIMM
-0.70
-0.60
-0.70
t
t
MIN
0.45
0.45
0.40
0.40
1.75
0.35
0.35
0.72
HP -
QHS
7.5
0.2
0.2
0.6
0.6
0.6
0.6
2.2
10
15
40
55
70
5
6
t
CH,
-40B
t
70,000
CL
+0.70
+0.60
+0.70
MAX
0.55
0.55
0.40
1.28
0.50
7.5
13
13
MIN
16
4
8
UNITS
MAX
t
t
t
t
t
t
t
24
12
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
©2004 Micron Technology, Inc.
UNITS
NOTES
40, 45
40, 45
23, 27
23, 27
22, 23
16, 37
16, 37
22, 23
pF
pF
pF
26
26
27
30
12
12
12
12
31
43
45