mt8vddt3264hg-265 Micron Semiconductor Products, mt8vddt3264hg-265 Datasheet

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mt8vddt3264hg-265

Manufacturer Part Number
mt8vddt3264hg-265
Description
128mb, 256mb, 512mb X64, Sr 200-pin Ddr Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 64), 256MB (32 Meg x 64),
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Single rank
• Gold edge contacts
DDR SDRAM SODIMM
MT8VDDT1664H – 128MB
MT8VDDT3264H – 256MB
MT8VDDT6464H – 512MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef8092973f/Source: 09005aef80921669
DD8C16_32_64x64H.fm - Rev. C 10/07 EN
(SODIMM)
or 512MB (64 Meg x 64)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
(128MB) and 7.8125µs (256MB, 512MB) maximum
average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Q = +2.6V)
128MB, 256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
1
2
www.micron.com
1
Figure 1:
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
PCB height: 31.75mm (1.25in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Not recommended for new designs.
3. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
A
A
3
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
2
2
2
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

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mt8vddt3264hg-265 Summary of contents

Page 1

... MT8VDDT3264H – 256MB MT8VDDT6464H – 512MB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 128MB (16 Meg x 64), 256MB (32 Meg x 64), or 512MB (64 Meg x 64) • ...

Page 2

... Part Number Density 256MB MT8VDDT3264HG-40B__ MT8VDDT3264HY-40B__ 256MB MT8VDDT3264HG-335__ 256MB 256MB MT8VDDT3264HY-335__ 256MB MT8VDDT3264HG-262__ MT8VDDT3264HG-26A__ 256MB MT8VDDT3264HG-265__ 256MB MT8VDDT3264HY-265__ 256MB PDF: 09005aef8092973f/Source: 09005aef80921669 DD8C16_32_64x64H.fm - Rev. C 10/07 EN 128MB, 256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM Data Rate (MT/ 2 400 333 266 – ...

Page 3

... All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8VDDT6464HY-335F3. PDF: 09005aef8092973f/Source: 09005aef80921669 DD8C16_32_64x64H.fm - Rev. C 10/07 EN 128MB, 256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM 1 512Mb DDR SDRAM Module Configuration Bandwidth 64 Meg x 64 3.2 GB/s 64 Meg x 64 3.2 GB/s 64 Meg ...

Page 4

Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 5

... Data strobe: Output with read data, input with write data. DQS is edge- aligned with read data, center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 6

Functional Block Diagrams Figure 2: Functional Block Diagram – Layout 1 (128MB, 256MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 ...

Page 7

Figure 3: Functional Block Diagram – Layout 2 (128MB, 256MB, 512MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 ...

Page 8

... DDR SDRAM modules incorporate serial presence-detect (SPD). The SPD function is implemented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

I Specifications DD Table 10: I Specifications and Conditions – 128MB DD Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the 128Mb (16 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 11

Table 11: I Specifications and Conditions – 256MB DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 12

Table 12: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... TYP TYP TYP Pin 1 63.60 (2.504) TYP Back view Module Dimensions U9 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 Pin 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 3.8 (0.15) MAX 1.1 (0.043) ...

Page 15

... Pin 1 63.60 (2.504) TYP Back view ® their respective owners. characterization sometimes occur. 15 Module Dimensions U9 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 Pin 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. 3.8 (0.15) MAX 1 ...

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