mt18vddt12872ag-335 Micron Semiconductor Products, mt18vddt12872ag-335 Datasheet - Page 18

• Manufacturer Part Number: mt18vddt12872ag-335
• Description: 256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 17: DDR SDRAM Component Electrical Characteristics and
Notes: 1–5, 8, 12–15, 29, 49; notes appear on pages 19–22; 0°C
pdf: 09005aef80814e61, source: 09005aef807f8acb
DD18C32_64_128_256x72AG.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
Address and control input setup time (slow
slew rate)
Address and Control input pulse width (for
each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-
valid, per access
Data hold skew factor
ACTIVE to PRECHARGE
command
ACTIVE to READ with Auto precharge
command
ACTIVE to ACTIVE/AUTO REFRESH command
period
AUTO REFRESH command
period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank
b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ
command delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh
interval
Terminating voltage delay to
V
Exit SELF REFRESH to non-READ
command
Exit SELF REFRESH to READ
command
DD
Recommended AC Operating Conditions (Continued)
256MB,
512MB, 1GB
2GB
256MB
512MB,
1GB, 2GB
256MB
512MB,
1GB, 2GB
SYMBOL
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
t
t
WPST
t
t
t
t
t
XSNR
XSRD
MRD
t
RPRE
REFC
RPST
t
WTR
t
QHS
RCD
RRD
REFI
VTD
IPW
RAS
RAP
t
t
t
RFC
QH
WR
na
RC
RP
IS
256MB, 512MB, 1GB, 2GB (x72, ECC, DR)
S
t
MIN
t
0.80
0.25
t
QHS
120
200
HP -
2.2
0.9
0.4
0.4
12
42
15
60
72
15
15
12
15
QH -
75
0
1
0
18
-335
t
T
DQSQ
70,000
A
MAX
140.6
0.50
70.3
15.6
1.1
0.6
0.6
7.8
+70°C; V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
t
MIN
t
0.25
QHS
120
200
HP -
2.2
0.9
0.4
0.4
t
15
40
15
60
75
15
15
15
15
75
QH -
1
0
1
0
DD
-262
t
= V
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
DD
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
t
t
MIN
0.25
QHS
120
t
200
HP -
2.2
0.9
0.4
0.4
15
40
20
65
75
20
20
15
15
75
-26A/-265
QH -
1
0
1
0
©2004 Micron Technology, Inc. All rights reserved.
t
DQSQ
120,000
MAX
140.6
0.75
70.3
15.6
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
NOTES
22, 23
18, 19
12
31
44
38
38
17
22
21
21