mt18hts25672chy-667 Micron Semiconductor Products, mt18hts25672chy-667 Datasheet - Page 10

• Manufacturer Part Number: mt18hts25672chy-667
• Description: 2gb, 4gb X72, Dr 200-pin Ddr2 Sdram Socdimm
• Manufacturer: Micron Semiconductor Products

PLL Specifications
Table 11:
Table 12:
PDF: 09005aef8253e3ea/Source: 09005aef8253e404
HTS18C256_512x72CH.fm - Rev. B 6/07 EN
Parameter
DC high-level input
voltage
DC low-level input
voltage
Input voltage (limits)
Input differential-pair
cross voltage
Input differential voltage
Input differential voltage
Input current
Output disabled current
Static supply current
Dynamic supply
Input capacitance
Stabilization time
Input clock slew rate
SSC modulation frequency
SSC clock input frequency deviation
PLL loop bandwidth (–3dB from unity gain)
Parameter
PLL Specifications
CUA845 device or JESD82-21 equivalent
PLL Clock Driver Timing Requirements and Switching Characteristics
Notes:
Symbol
1. PLL timing and switching specifications are critical for proper operation of the DDR2 DIMM.
V
V
I
ID
ID
I
DDLD
V
V
V
I
C
V
ODL
DD
I
This is a subset of parameters for the specific PLL used.
(
(
IH
IN
IX
IN
IL
I
DC
AC
)
)
OE, OS, FBIN, FBIN#
OE, OS, CK, CK#
OE, OS, CK, CK#
Each input
CK, CK#
Pins
n/a
2GB, 4GB (x72, DR) 200-Pin DDR2 SDRAM SOCDIMM
(not connected to a PCB)
CK and CK# = 410 MH
OE = L, V
10
all output are open
Differential input
Differential input
Differential input
V
V
V
I
I
I
Condition
= V
= V
= V
LVCMOS
LVCMOS
C
L
ODL
DD
DD
DD
= 0pf
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
or V
or V
or V
slr(i)
= 100mV
t
L
SS
SS
SS
Z
(V
0.65 × V
DD
Min
0.0
30
–
1
2
–250
Min
–0.3
/2) - 0.15 (V
100
–10
0.3
0.6
–
–
–
2
DD
©2006 Micron Technology, Inc. All rights reserved.
PLL Specifications
0.35 × V
DD
V
V
V
Max
–0.5
DD
DD
DD
33
Max
+250
+500
+300
6
4
/2) + 0.15
–
+10
3
–
–
+ 0.3
+ 0.4
+ 0.4
DD
Units
MHz
V/ns
Units
kHz
µs
%
mA
µA
µA
µA
µA
pF
V
V
V
V
V
V