mt18htf6472ay Micron Semiconductor Products, mt18htf6472ay Datasheet - Page 16

• Manufacturer Part Number: mt18htf6472ay
• Description: Ddr2 Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 13: DDR2 I
Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
PDF: 09005aef80e8ad4d
htf18c64_128_256_512x72ay – Rev. I 3/10 EN
Parameter
Operating bank interleave read current: All device banks interleaving
reads; I
=
HIGH, S# is HIGH between valid commands; Address bus inputs are stable
during deselects; Data bus inputs are switching
t
CK (I
OUT
DD
),
= 0mA; BL = 4, CL = CL (I
t
RC =
t
RC (I
DD
Notes:
DD
Specifications and Conditions (Die Revision A) – 2GB (Continued)
),
t
RRD =
1. Value calculated as one module rank in this operating condition; all other module ranks
2. Value calculated reflects all module ranks in this operating condition.
512MB, 1GB, 2GB, 4GB (x72, DR) 240-Pin DDR2 SDRAM UDIMM
t
in I
RRD (I
DD
DD2P
), AL =
DD
(CKE LOW) mode.
),
t
t
RCD (I
RCD =
DD
t
RCD (I
) - 1 ×
DD
16
t
CK (I
); CKE is
DD
);
t
CK
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
DD7
1
-80E/
3078
-800
2763
-667
© 2003 Micron Technology, Inc. All rights reserved.
I
DD
2763
-53E
Specifications
-40E
2403
Units
mA