hb286075a1 HITACHI, hb286075a1 Datasheet - Page 41

• Manufacturer Part Number: hb286075a1
• Description: Mega Byte Flash Card
• Manufacturer: HITACHI

DC Characteristics-1 (Ta = 0 to +60˚C, V
Parameter
Input leakage current
Input voltage (CMOS)
Input voltage (schmitt trigger)
Output voltage
Note:
DC Characteristics-2 (Ta = 0 to +60˚C, V
Parameter
Sleep/standby current
Sector read current
Sector write current
HB286075A1, HB286060A1, HB286045A1, HB286030A1, HB286015A1
1. Except pulled up input pin.
Symbol
I
I
I
I
I
SP1
CCR
CCR
CCW
CCW
Symbol
I
V
V
V
V
V
V
(DC)
(Peak)
(DC)
(Peak)
LI
IL
IH
IL
IH
OL
OH
Typ
2
70
100
70
100
Min
—
–0.3
4.0
—
—
—
V
CC
– 0.8 —
Max
3
100
150
100
150
CC
CC
Typ
—
—
—
2.0
2.8
—
= 5.0 V 10%)
= 5.0 V 10%)
Unit
mA
mA
mA
Max
0.8
V
—
—
0.4
—
CC
1
+ 0.2 V
Test conditions
CMOS level (control signal = V
CMOS level (control signal = V
between sector read transfer
CMOS level (control signal = V
between sector write transfer
Unit
V
V
V
V
V
A
Test conditions
Vin = GND to V
I
I
OL
OH
= 8 mA
= –8 mA
CC
CC
CC
CC
– 0.2 V)
– 0.2 V)
– 0.2 V)
Note
1
41