k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet - Page 13

• Manufacturer Part Number: k4s560832j
• Description: 256mb J-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

K4S560432J
K4S560832J
K4S561632J
I
I
17.0 IBIS SPECIFICATION
OH
OL
Characteristics (Pull-down)
Characteristics (Pull-up)
Voltage
Voltage
0.0
0.4
0.65
0.85
1.0
1.4
1.5
1.65
1.8
1.95
3.0
3.45
(V)
3.45
3.3
3.0
2.6
2.4
2.0
1.8
1.65
1.5
1.4
1.0
0.0
(V)
166MHz
133MHz
166MHz
133MHz
I (mA)
I (mA)
-21.1
-34.1
-58.7
-67.3
-73.0
-77.9
-80.8
-88.6
-93.0
27.5
41.8
51.6
58.0
70.7
72.9
75.4
77.0
77.6
80.3
81.4
Min
Min
0.0
0.0
166MHz
133MHz
166MHz
133MHz
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
I (mA)
I (mA)
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
Max
-27.3
-74.1
Max
70.2
-2.4
0.0
-100
-200
-300
-400
-500
-600
250
200
150
100
50
0
0
0
0
0.5
0.5
166MHz/133MHz Pull-down
166MHz/133MHz Pull-up
1
1
I
I
I
I
OH
OH
OL
OL
1.5
1.5
Min (166MHz/133MHz)
Max (166MHz/133MHz)
Voltage
Voltage
Min (166MHz/133MHz)
Max (166MHz/133MHz)
Synchronous DRAM
Rev. 1.21 March 2008
2
2
2.5
2.5
3
3
3.5
3.5