k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet - Page 10

• Manufacturer Part Number: k4s560832j
• Description: 256mb J-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

12.0 DC Characteristics (x16)
(Recommended operating condition unless otherwise noted, T
K4S560432J
K4S560832J
K4S561632J
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S561632J-UC
4. K4S561632J-UL
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS CKE & CLK
PS CKE & CLK
P
N
P
N
Burst length = 1
t
I
CKE
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
≤
≤
≤
RC
RC
V
V
0.2V
IH
IH
IH
IH
(min)
(min)
IL
IL
(max), t
(max), t
(min), CS ≥ V
(min), CLK
(min), CS ≥ V
(min), CLK
≤
≤
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
= 10ns
= 10ns
A
≤
≤
= 0 to 70°C)
IH
V
IH
V
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
CC
CC
DDQ
= 10ns
= 10ns
= ∞
= ∞
/V
SSQ
C
L
).
110
140
200
50
Synchronous DRAM
Rev. 1.21 March 2008
Version
120
180
1.5
60
90
15
10
28
20
2
2
5
5
3
110
160
75
70
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
1
2
3
4