k4s560832j Samsung Semiconductor, Inc., k4s560832j Datasheet - Page 12
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k4s560832j
Manufacturer Part Number
k4s560832j
Description
256mb J-die Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4S560832J.pdf
(15 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4s560832j-UC75
Manufacturer:
SIEMENS
Quantity:
11
K4S560432J
K4S560832J
K4S561632J
15.0 AC Characteristics
16.0 DQ Buffer Output Drive Characteristics
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output in Hi-Z
Notes :
Notes :
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
4. tSS applies for address setup time, clock enable setup time. commend setup time and data setup time
1. Rise time specification based on 0pF + 50 Ω to V
2. Fall time specification based on 0pF + 50 Ω to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
tSH applies for address holde time, clock enable hold time. commend hold time and data hold time
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
tfh
trh
tfh
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Symbol
t
t
t
t
t
SAC
t
t
t
t
SHZ
Condition
SLZ
OH
CC
CH
SS
SH
CL
SS
.
Min
1.5
50 (x16 only)
5
2
2
2
1
1
DD
-
-
-
-
-
-
SS
, use these values to design to.
, use these values to design to.
1000
Max
4.5
4.5
-
-
-
-
-
-
-
-
-
1.37
1.30
Min
2.8
2.0
Min
60(x16 only)
2.5
2.5
2.5
1.5
6
1
1
-
-
Typ
3.9
2.9
(AC operating conditions unless otherwise noted)
1000
Max
5
5
-
-
Synchronous DRAM
Min
7.5
2.5
2.5
1.5
0.8
10
Max
4.37
Rev. 1.21 March 2008
3
3
1
3.8
5.6
5.0
75
1000
Max
5.4
5.4
6
6
Volts/ns
Volts/ns
Volts/ns
Volts/ns
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Note
1,2
1,2
1,2
3
3
1
2
3
3
3
3
2