k4d28163hd Samsung Semiconductor, Inc., k4d28163hd Datasheet - Page 14

• Manufacturer Part Number: k4d28163hd
• Description: 128mbit Ddr Sdram
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS (II)
AC CHARACTERISTICS (I)
Note : 1. For normal write operation, even numbers of Din are to be written inside DRAM
K4D28163HD-TC36
K4D28163HD-TC40
K4D28163HD-TC50
K4D28163HD
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active
Last data in to Row precharge
@Normal Precharge
Last data in to Row precharge
@Auto Precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery
+ Precharge
Exit self refresh to read com-
Power down exit time
Refresh interval time
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
200MHz ( 5.0ns )
166MHz ( 6.0ns )
Frequency
Frequency
Frequency
Parameter
Cas Latency
Cas Latency
Cas Latency
3
3
3
3
3
3
3
3
3
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RC
RFC
RAS
RCD
RP
RRD
WR
WR_A
CDLR
CCD
MRD
DAL
XSR
PDEX
REF
tRC
1tCK+tIS
tRC
tRC
15
14
12
10
14
12
10
12
10
Min
200
7.8
15
17
10
5
5
2
3
3
2
1
2
8
-36
tRFC
tRFC
tRFC
17
16
14
12
16
14
12
14
12
Max
100K
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1tCK+tIS
tRAS
tRAS
tRAS
Min
200
7.8
10
14
16
9
8
7
9
8
7
8
7
9
5
5
2
3
3
2
1
2
8
- 14 -
-40
100K
Max
tRCD
tRCD
tRCD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
5
5
4
3
5
4
3
4
3
1tCK+tIS
Min
15.6
200
12
14
8
4
4
2
2
3
2
1
2
7
tRP
tRP
tRP
5
5
4
3
5
4
3
4
3
-50
100K
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
tRRD
tRRD
tRRD
2
2
2
2
2
2
2
2
2
128M DDR SDRAM
1tCK+tIS
Min
15.6
200
1 0
1 2
7
3
3
2
2
3
2
1
2
6
tDAL
tDAL
tDAL
Rev. 1.4(Aug. 2002)
8
8
7
6
8
7
6
7
6
-60
100K
Max
(Unit : Number of Clock)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
tCK
tCK
tCK
tCK
Unit
Unit
tCK
tCK
tCK
tCK
tCK
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
us
Note
1
1
1