k4t56043qf Samsung Semiconductor, Inc., k4t56043qf Datasheet - Page 8
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k4t56043qf
Manufacturer Part Number
k4t56043qf
Description
256mb F-die Ddr2 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4T56043QF.pdf
(36 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
k4t56043qf-GCCC
Manufacturer:
SAMSUNG
Quantity:
4 000
256Mb F-die DDR2 SDRAM
Notes:
1.
2.
3.
4.
Ball Locations (x8)
Pins B3 and A2 have identical capacitance as pins B7 and A8.
For a read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS
& DQS and input masking function is disabled.
The function of DM or RDQS/RDQS are enabled by EMRS command.
VDDL and VSSDL are power and ground for the DLL. It is recommended that they are isolated on the device
from VDD, VDDQ, VSS, and VSSQ.
x8 package pinout (Top View) : 60ball FBGA Package
VDDQ
G
A
B
C
D
E
H
K
F
J
L
VDD
DQ6
DQ4
VDDL
VDD
Top View (See the balls through the Package)
VSS
NC
1
+
+
+
1
VSSQ
VREF
DQ1
VSSQ
RDQS
CKE
BA0
A10
A12
NU/
A3
A7
2
2
+ : Depopulated Ball
: Populated Ball
3
RDQS
VDDQ
DQ3
3
VSS
VSS
BA1
DM/
WE
NC
A1
A5
A9
+
+
+
+
+
+
+
+
+
+
+
4
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5
G
A
B
C
D
E
H
K
F
J
L
+
+
+
+
+
+
+
+
+
+
+
6
VSSDL
7
VSSQ
VDDQ
DQ2
DQS
RAS
CAS
A11
NC
7
A2
A6
8
8
VSSQ
DQ0
VSSQ
DQS
CK
CK
CS
NC
A0
A4
A8
+
+
+
9
9
VDDQ
VDDQ
DQ7
DQ5
VDD
VSS
VDD
ODT
Rev. 0.91 (Sep. 2003)
DDR2 SDRAM
Preliminary