k4t1g084qa-zce60 Samsung Semiconductor, Inc., k4t1g084qa-zce60 Datasheet - Page 18

• Manufacturer Part Number: k4t1g084qa-zce60
• Description: 1gb A-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

Input/Output capacitance
Electrical Characteristics & AC Timing for DDR2-667/533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
1G A-die DDR2 SDRAM
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
(0 °C < T
Speed
Parameter
CASE
< 95 °C; V
Parameter
DDQ
3.75
min
= 1.8V + 0.1V; V
15
15
54
39
5
3
DDR2-667(E6)
5 - 5- 5
tRFC
tREFI
70000
max
8
8
8
-
-
-
DD
85 °C < T
0 °C ≤ T
= 1.8V + 0.1V)
Symbol
Page 18 of 28
CASE
CASE
CCK
CDCK
CI
CDI
CIO
CDIO
3.75
3.75
min
Symbol
15
15
55
40
5
≤ 85°C
≤ 95°C
DDR2-533(D5)
4 - 4 - 4
256Mb
70000
Min
max
1.0
1.0
2.5
DDR2-400/533
x
x
x
7.8
3.9
8
8
8
75
-
-
-
512Mb
105
7.8
3.9
Max
0.25
0.25
2.0
2.0
4.0
0.5
min
15
15
55
40
5
5
-
DDR2-400(CC)
127.5
1Gb
7.8
3.9
3 - 3 - 3
Min
1.0
1.0
2.5
x
x
x
DDR2 SDRAM
DDR2-667
Rev. 1.1 Aug. 2005
2Gb
195
7.8
3.9
70000
max
8
8
-
-
-
-
Max
0.25
0.25
2.0
2.0
3.5
0.5
327.5
4Gb
7.8
3.9
Units
ns
ns
ns
ns
ns
ns
ns
Units
Units
pF
pF
pF
pF
pF
pF
ns
µs
µs