k4t1g084qa-zce60 Samsung Semiconductor, Inc., k4t1g084qa-zce60 Datasheet - Page 13

• Manufacturer Part Number: k4t1g084qa-zce60
• Description: 1gb A-die Ddr2 Sdram
• Manufacturer: Samsung Semiconductor, Inc.

1G A-die DDR2 SDRAM
Differential input AC logic Level
Notes :
1. V
2. The typical value of V
Differential AC output parameters
Note :
1. The typical value of V
V
OX
UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
indicates the voltage at which differential input signals must cross.
ID
(AC) indicates the voltage at which differential output signals must cross.
V
Symbol
Symbol
V
V
(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or
OX
ID
IX
(AC)
(AC)
(AC)
IX
OX
(AC) is expected to be about 0.5 * V
(AC) is expected to be about 0.5 * V
AC differential cross point voltage
AC differential cross point voltage
AC differential input voltage
V
V
CP
TR
Parameter
Parameter
< Differential signal levels >
DDQ
DDQ
of the transmitting device and V
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V
V
of the transmitting device and V
DDQ
SSQ
V
ID
0.5 * V
0.5 * V
DDQ
DDQ
Min.
Min.
0.5
- 0.175
- 0.125
V
IX or
IX
(AC) is expected to track variations in V
OX
Crossing point
(AC) is expected to track variations in V
V
OX
0.5 * V
0.5 * V
V
DDQ
DDQ
DDQ
Max.
Max.
+ 0.6
+ 0.175
+ 0.125
DDR2 SDRAM
Rev. 1.1 Aug. 2005
IH
(AC) - V
Units
Units
V
V
V
IL
(AC).
DDQ
DDQ
. VIX(AC)
Notes
Note
.
1
2
1