k4t1g084qa-zce60 Samsung Semiconductor, Inc., k4t1g084qa-zce60 Datasheet - Page 12

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k4t1g084qa-zce60

Manufacturer Part Number
k4t1g084qa-zce60
Description
1gb A-die Ddr2 Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1G A-die DDR2 SDRAM
Operating Temperature Condition
Note :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self
Input DC Logic Level
Input AC Logic Level
AC Input Test Conditions
Notes:
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
standard.
refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
max for falling edges as shown in the below figure.
transitions.
Symbol
Symbol
V
V
V
V
V
IH
IH
IL
IL
SWING(MAX)
Symbol
(DC)
(AC)
(DC)
(AC)
SLEW
V
Symbol
TOPER
REF
Input reference voltage
Input signal maximum peak to peak swing
Input signal minimum slew rate
AC input logic high
DC input logic high
AC input logic low
DC input logic low
Parameter
Parameter
V
Falling Slew =
SWING(MAX)
Operating Temperature
Parameter
delta TF
Condition
V
V
REF
REF
< AC Input Test Signal Waveform >
Min.
V
+ 0.250
DDR2-400, DDR2-533
-
- V
delta TF
REF
IL
Min.
- 0.3
(AC) max
+ 0.125
Page 12 of 28
IL
(AC) to V
V
REF
Max.
IH
delta TR
IH/IL
REF
- 0.250
(AC) on the positive transitions and V
-
Rising Slew =
(AC) level applied to the device under test.
to V
Rating
0 to 95
IH
(AC) min for rising edges and the range from V
V
V
0.5 * V
REF
DDQ
Value
Max.
1.0
1.0
V
- 0.125
REF
+ 0.3
V
DDQ
IH
Min.
(AC) min - V
+ 0.200
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
DDR2-667
Units
REF
°C
Units
V/ns
V
IH
V
V
REF
(AC) to V
Units
DDR2 SDRAM
Max.
Rev. 1.1 Aug. 2005
V
V
- 0.200
IL
(AC) on the negative
Notes
1, 2, 3
REF
Notes
2, 3
Notes
1
1
Units
to V
V
V
IL
(AC)

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