lrs1386 Sharp Microelectronics of the Americas, lrs1386 Datasheet - Page 4

• Manufacturer Part Number: lrs1386
• Description: Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

1. Description
The LRS1386 is a combination memory organized as 4,194,304 x16 bit flash memory and 524,288 x16 bit static RAM in one
package.
Features
Flash Memory
SRAM
- Power supply
- Operating temperature
- Not designed or rated as radiation hardened
- 72pin CSP (LCSP072-P-0811) plastic package
- Flash memory has P-type bulk silicon, and SRAM has P-type bulk silicon
- Access Time
- Power supply current (The current for F-V
- Optimized Array Blocking Architecture
- Extended Cycling Capability
- Enhanced Automated Suspend Options
- OTP Block
- Access Time
- Power Supply current
Read
Word write
Block erase
Reset Power-Down
Standby
Eight 4K-word Parameter Blocks
One-hundred and twenty-seven 32K-word Main Blocks
Top Parameter Location
100,000 Block Erase Cycles
1,000 Block Erase Cycles and total 80 hours (F-V
Word Write Suspend to Read
Block Erase Suspend to Word Write
Block Erase Suspend to Read
4 Word + 4 Word Array
Operating current
Standby current
Data retention current
CC
pin and F-V
(F-V
L R S1 3 8 6
PP
PP
= 2.7V to 3.3V)
= 11.7V to 12.3V)
PP
pin)
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2.7V to 3.3V
-25°C to +85°C
90 ns
25 mA
60 mA
30 mA
25 µA
25 µA
85 ns
50 mA
25 µA
25 µA
8 mA
(Max.)
(Max. t
(Max. t
(Max.)
(Max. S-V
(Max.)
(Max. t
(Max.)
(Max.)
(Max. F-RST = GND ± 0.2V,
(Max. F-CE = F-RST = F-V
I
RC
RC
CYCLE
OUT
, t
, t
CC
WC
WC
(F-RY/BY) = 0mA)
= 3.0V)
= 200ns, CMOS Input)
= Min.)
= 1µs, CMOS Input)
CC
± 0.2V)
2