am49bds640ah Meet Spansion Inc., am49bds640ah Datasheet - Page 26

• Manufacturer Part Number: am49bds640ah
• Description: Stacked Multichip Package Mcp , Flash Memory And Psram Cmos 1.8 Volt-only Simultaneous Read/write, Burst Mode 64 Megabit 4m ? 16-bit Flash Memory, And 16 Mbit 1m ? 16-bit Psram
• Manufacturer: Meet Spansion Inc.

24
Addresses
Addresses
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
00FDh
0017h
0019h
0000h
0000h
0004h
0000h
0009h
0000h
0004h
0000h
0004h
0000h
0018h
0001h
0000h
0000h
0000h
0003h
0007h
0000h
0020h
0000h
0000h
0000h
0001h
0007h
0000h
0020h
0000h
0000h
0000h
0000h
0000h
Data
Data
A D V A N C E
Table 8. Device Geometry Definition
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 7. System Interface String
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
Am49BDS640AH
N
I N F O R M A T I O N
byte
PP
PP
N
times typical
pin present)
pin present)
N
N
N
times typical (00h = not supported)
Description
Description
times typical
ms (00h = not supported)
N
N
N
times typical
N
µ
N
s (00h = not supported)
ms
µs
December 5, 2003